(China (Mainland))
Product Summary
The TPV8100B is designed for transmitter output stages covering TV band IV and V, Operating at 28V. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output matching networks, the TPV8100B features high impedances. It can easily operate in a full 470 MHz to 860 MHz bandwidth in a single and simple circuit.
Parametrics
Absolute Maximum Ratings: (1)IC: 12A ; (2)VCER: 40 V RBE = 10 Ω 30 ; (3)PDISS: 215 W @ TC = 25℃; (4)TJ: -65 OC to +200℃ ; (5)TSTG: -65 OC to +150℃; (6)θJC: 0.8℃/W.
Features
Features: (1)Internal Input, Output Matching; (2)Common Emitter Configuration; (3)Gold Metalization; (4)Emitter Ballasting.
Diagrams
| Image | Part No | Mfg | Description |  |
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 TPV8100B |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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TPV8100 |
Other |
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Data Sheet |
Negotiable |
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TPV8100B |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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TPV8200B |
Other |
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Data Sheet |
Negotiable |
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